GaN light emitting diodes with wing-type imbedded contacts
نویسندگان
چکیده
منابع مشابه
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
The optical and electrical properties of indium tin oxide (ITO)(60 nm), Ni(3.5 nm)/ITO(60 nm) and Ni(5 nm)/Au(5 nm) films were studied. It was found that the normalized transmittance of ITO and Ni/ITO films could reach 98.2% and 86.6% at 470 nm, which was much larger than that of the Ni/Au film. It was also found that both Ni/ITO and Ni/Au could form good ohmic contact on top of p-GaN. In contr...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2012
ISSN: 1094-4087
DOI: 10.1364/oe.21.0000a1